• Nitride ferroelectric semiconductors for next-generation electronics

    Postdoctoral researchers Ding Wang (left) and Ping Wang (proper) examine the floor of a single-crystalline ferroelectric ScAlN wafer grown using molecular beam epitaxy. Credit score: Robert Coelius For the primary time, researchers achieved single-crystalline top quality ferroelectric III-V semiconductors that may be built-in into present platforms for a broad vary of ferroelectric, digital, optoelectronic, and photonic gadget purposes. The ferroelectric semiconductor was made utilizing a molecular beam epitaxy (MBE) system, which is already used to fabricate mainstream nitride-based gadgets. Their achievement paves the way in which to a brand new era of semiconductors that supply post-Moore’s Legislation efficiency with all kinds of purposes. “From a scientific standpoint, we have been…